A safe operating area model for SOI lateral IGBTs

Author

Matsudai, Tomoko ; Funaki, Hideyuki ; Nakagawa, Akio

Author_Institution

Mater. & Devices Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

41

Lastpage

44

Abstract

This paper reports, for the first time, a mechanism, which limits the safe operating area (RBSOA). We numerically verify that a RBSOA limiting mechanism is that the device breakdown voltage dynamically reduces when the net positive sheet charge in the SOI layer exceeds the optimum positive sheet charge determined by the SOI-Resurf principle. It was found that the forward SOA for the steady conduction state is far larger than the reverse SOA for switching transients

Keywords

insulated gate bipolar transistors; semiconductor device models; semiconductor device reliability; short-circuit currents; silicon-on-insulator; transient analysis; RBSOA limiting mechanism; SOI lateral IGBTs; SOI-Resurf principle; device breakdown voltage; net positive sheet charge; safe operating area model; short circuit condition; steady conduction state; switching transients; Breakdown voltage; Circuit testing; Current density; Impact ionization; Insulated gate bipolar transistors; Integrated circuit technology; Laboratories; Semiconductor optical amplifiers; Steady-state; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601426

Filename

601426