Title :
Simulation of the active behavior of silicon irradiated microstrip detectors
Author :
Passeri, D. ; Baroncini, M. ; Ciampolini, P. ; Bilei, G.M. ; Santocchia, A. ; Checcucci, B. ; Fiandrini, E.
Author_Institution :
Ist. Nazionale di Fisica Nucl., Perugia, Italy
Abstract :
In this paper, we discuss the application of a conventional device simulator to the study of silicon microstrip detectors, with special emphasis on the issues related to radiation damage. Suitable physical models are introduced, and their incorporation into the simulation code is illustrated. Simulation of simple structures provides a preliminary validation: results are physically sound, and agrees with those expected from theory and literature works
Keywords :
radiation effects; semiconductor device models; silicon radiation detectors; Si; Si microstrip detectors; device simulator; irradiated; radiation damage; simulation code; Analytical models; Design optimization; Microelectronics; Microstrip; Numerical analysis; Radiation detectors; Silicon radiation detectors; Solid state circuits; Very large scale integration; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672525
