Title :
Comparative analysis of switching performance of transistors in SOS process for RF applications
Author :
Amirkhanzadeh, Robabeh ; Sjöland, Henrik ; Tikka, Ajay ; Faulkner, Mike
Author_Institution :
Centre for Telecommun. & Micro-Electron. CTME, Victoria Univ., Melbourne, VIC, Australia
Abstract :
Silicon-on-sapphire (SOS) technology is gaining rapid ground in RF applications due to its inherent low parasitic capacitance and the availability of high Q passive components. In this paper, performance of different transistors in SOS technology for switching applications has been verified. Quality factor, OFF performance, and harmonic distortion of all N-types transistors have been simulated and a comparative analysis is provided. Based on this analysis it can be concluded that for the same W/L ratio, NL and IN transistors in the FC process give higher quality factor and also higher Con/Coff, while in the GC process, IN devices perform best.
Keywords :
Q-factor; field effect transistor switches; harmonics; sapphire; silicon; IN transistor; NL transistor; RF applications; SOS process; Si-Al2O2; harmonic distortion; off performance; quality factor; silicon-on-sapphire; switching application; transistor switching performance; Capacitors; Performance evaluation; Power transmission lines; Q factor; Radio frequency; Switching circuits; Transistors; SOS; switching performance; transmission line;
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
DOI :
10.1109/APCCAS.2010.5775012
