Title :
Low series noise and low power preamplifiers for cryogenic applications in the GaAs CHFET technology from Honeywell
Author :
Christoforou, G. ; Dzahini, D. ; Pouxe, J. ; Rossetto, O. ; Baier, S. ; Peczalski, A.
Author_Institution :
Inst. des Sci. Nucl., CNRS, Grenoble, France
Abstract :
In this paper are reported two folded cascode preamplifiers in a GaAs complementary heterostructure FET technology. With a 35 mW bias power dissipation, the equivalent input series noise voltage power density is en=0.32 nV/√(Hz) for the first circuit with a NFET in the input stage, while the second circuit using a PFET in the input exhibits a series noise coefficient en=0.8 nV/√(Hz). The dynamic range on a 50 Ω load for both preamplifiers is better than 2 V with ±0.5% and ±0.8% of full scale range non linearity
Keywords :
III-V semiconductors; cryogenic electronics; field effect analogue integrated circuits; gallium arsenide; integrated circuit noise; nuclear electronics; preamplifiers; 2 V; 35 mW; 50 ohm; GaAs; GaAs CHFET; GaAs complementary heterostructure FET; NFET; PFET; bias power dissipation; dynamic range; equivalent input series noise voltage power density; folded cascode preamplifiers; low power preamplifiers; low series noise preamplifiers; series noise coefficient; CMOS technology; Circuit noise; Cryogenics; FETs; Gallium arsenide; Indium gallium arsenide; Noise shaping; Power dissipation; Preamplifiers; Temperature;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672567
