Title :
A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology
Author :
Vestling, L. ; Edholm, B. ; Olsson, J. ; Tiensuu, S. ; Söderbärg, A.
Author_Institution :
Angstrom Lab., Uppsala Univ., Sweden
Abstract :
A novel high-voltage DMOS transistor with a low doped extended gate is presented. The device withstands 240 V in the off-state and has a specific on-resistance of 24 mΩcm2. The transconductance is 60 mS/mm at 3 V gate voltage. The sub-micron channel length gives small-signal high-frequency performance as fT=2.8 GHz and fmax=5.8 GHz and the unilateral power gain at 900 MHz is over 15 dB. The dependence of breakdown voltage and on-resistance on gate doping level and polysilicon gate length is investigated with device simulations. It is found that the breakdown voltage is highly dependent on the gate doping level
Keywords :
UHF field effect transistors; characteristics measurement; power MOSFET; power field effect transistors; semiconductor device models; semiconductor doping; 15 dB; 2.8 GHz; 240 V; 3 V; 5.8 GHz; 60 mS/mm; 900 MHz; breakdown voltage; device simulations; extended gate RESURF technology; gate doping level; gate voltage; high-frequency high-voltage LDMOS transistor; high-voltage DMOS transistor; low doped extended gate; polysilicon gate length; small-signal high-frequency performance; specific on-resistance; sub-micron channel length; transconductance; unilateral power gain; CMOS logic circuits; Circuit simulation; Doping; Laboratories; Performance gain; Solid state circuits; Switching circuits; Transconductance; Transistors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601427
