Title :
Use of CdZnTe pixel arrays with multiplexer readout to map detector crystal properties
Author :
Barber, H.B. ; Dereniak, E. ; Eskin, J.D. ; Hilton, N.R. ; Marks, D.G. ; Matherson, K.J. ; Woolfenden, J.M. ; Young, E.T.
Author_Institution :
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
Abstract :
We demonstrate the use of pixel arrays to map CdZnTe detector materials properties in situ. Our readout technique uses a multiplexer containing a gated integrator and is sensitive to DC currents. We have made extensive measurements of leakage current in one Cd0.9Zn 0.1Te hybrid detector array that has size 25×25×1.5 mm3 and 380 μm pixel pitch. The pixel I-V curves are essentially ohmic and the leakage pattern is qualitatively similar at different temperatures. Histograms of pixel resistivity are relatively flat in the range 5-60 GΩ cm. Pixel Arrhenius plots have slopes that differ with pixel resistivity
Keywords :
II-VI semiconductors; cadmium compounds; gamma-ray detection; nuclear electronics; position sensitive particle detectors; semiconductor counters; zinc compounds; 1.5 mm; 25 mm; Arrhenius plots; CdZnTe; DC currents; detector crystal properties; gamma ray detection; gated integrator; hybrid detector array; leakage current; multiplexer readout; pixel I-V curves; pixel arrays; readout technique; semiconductor detector; Conductivity; Current measurement; Detectors; Leakage current; Material properties; Multiplexing; Sensor arrays; Size measurement; Tellurium; Zinc;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672586
