Title :
A vertical high voltage termination structure for high-resistivity silicon detectors
Author :
Segal, J.D. ; Kenney, C.J. ; Aw, C.H. ; Parker, S.I. ; Vilkelis, G. ; Iwanczyk, J.S. ; Patt, B.E. ; Plummer, J.
Author_Institution :
HPL Inc., Milpitas, CA, USA
Abstract :
A new high voltage diode termination structure has been developed for the backside junction of silicon detectors which require double-sided processing. The new structure consists of a deep vertical etch through the diode at the edge of the detector. It requires only one mask, and is extremely robust to scratches or other mechanical damage. The vertical termination has been successfully applied to an integrated pixel detector, where it increased yield. It has also been applied to an 8 mm diameter cylindrical drift detector
Keywords :
detector circuits; diodes; nuclear electronics; silicon radiation detectors; 8 mm; 8 mm diameter cylindrical drift detector; backside junction; deep vertical etch; double-sided processing; high-resistivity Si detectors; high-resistivity silicon detectors; integrated pixel detector; mechanical damage; vertical high voltage termination structure; Detectors; Etching; Face detection; Integrated circuit technology; Medical simulation; Robustness; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672589
