A vertical high voltage termination structure for high-resistivity silicon detectors

Author

Segal, J.D. ; Kenney, C.J. ; Aw, C.H. ; Parker, S.I. ; Vilkelis, G. ; Iwanczyk, J.S. ; Patt, B.E. ; Plummer, J.

Author_Institution

HPL Inc., Milpitas, CA, USA

fYear

1997

fDate

9-15 Nov 1997

Firstpage

299

Abstract

A new high voltage diode termination structure has been developed for the backside junction of silicon detectors which require double-sided processing. The new structure consists of a deep vertical etch through the diode at the edge of the detector. It requires only one mask, and is extremely robust to scratches or other mechanical damage. The vertical termination has been successfully applied to an integrated pixel detector, where it increased yield. It has also been applied to an 8 mm diameter cylindrical drift detector

Keywords

detector circuits; diodes; nuclear electronics; silicon radiation detectors; 8 mm; 8 mm diameter cylindrical drift detector; backside junction; deep vertical etch; double-sided processing; high-resistivity Si detectors; high-resistivity silicon detectors; integrated pixel detector; mechanical damage; vertical high voltage termination structure; Detectors; Etching; Face detection; Integrated circuit technology; Medical simulation; Robustness; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672589

Filename

672589