Mechanism of the suppression of the floating-body effect for SOI MOSFETs with SiGe source structure

Author

Nishiyama, A. ; Arisumi, O. ; Yoshimi, M.

Author_Institution

ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

68

Lastpage

69

Abstract

SiGe layers were formed in source regions of partially depleted 0.25 μm SOI nMOSFETs with the Ge implantation technique and the floating-body effect was investigated for the SiGe source structure. It was confirmed that kinks in the Id-Vd characteristics and the anomalous lowering of the subthreshold swing were suppressed and that the drain breakdown voltage increased for this structure. The mechanism of this suppression effect is presented for the first time. It is found that this suppression originates from the decrease in the current gain for source/channel/drain lateral bipolar transistors with the SiGe source structure. The temperature dependence of the base current indicates that the bandgap narrowing in the source region is the major reason for the decrease in the current gain

Keywords

Ge-Si alloys; MOSFET; electric breakdown; energy gap; ion implantation; silicon-on-insulator; 0.25 micron; Ge implantation technique; Id-Vd characteristics; SOI MOSFETs; Si-SiGe; SiGe source structure; bandgap narrowing; current gain; drain breakdown voltage; floating-body effect suppression; n-channel MOSFET; partially depleted NMOSFET; source/channel/drain lateral bipolar transistors; subthreshold swing; temperature dependence; Annealing; Bipolar transistors; Germanium silicon alloys; Laboratories; MOSFET circuits; Microelectronics; Photonic band gap; Silicon germanium; Temperature dependence; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552497

Filename

552497