DocumentCode :
3232227
Title :
Contact and non contact post-CMP cleaning of thermal oxide silicon wafers
Author :
Moumen, N. ; Guarrera, M. ; Piboontum, C. ; Busnaina, A.A.
Author_Institution :
Microcontamination Res. Lab., Clarkson Univ., Potsdam, NY, USA
fYear :
1999
fDate :
1999
Firstpage :
250
Lastpage :
253
Abstract :
Post-CMP cleaning of polished thermal oxide wafers is conducted using megasonic and brush cleaning techniques. The wafers were polished using Rodel silica based slurry. The results achieved by the two different cleaning methods are presented and compared. They show that although the two techniques produce comparable cleaning performance, non-contact cleaning using SCl produces lower defect counts on the cleaned wafers
Keywords :
chemical mechanical polishing; integrated circuit manufacture; particle counting; surface cleaning; ultrasonic cleaning; H2O-H2O2-NH4OH; Rodel silica based slurry; SCl; Si; SiO2-Si; brush cleaning; cleaning performance; contact post-CMP cleaning; defect counts; megasonic cleaning; noncontact post-CMP cleaning; particle removal; thermal oxide silicon wafers; wafer polishing; Brushes; Chemistry; Cleaning; Electrostatics; Etching; Laboratories; Semiconductor device manufacture; Silicon compounds; Slurries; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-5217-3
Type :
conf
DOI :
10.1109/ASMC.1999.798236
Filename :
798236
Link To Document :
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