Title :
C-axis parallel oriented A1N film resonator fabricated by ion-beam assisted RF magnetron sputtering
Author :
Suzuki, Masashi ; Yanagitani, Takahiko
Author_Institution :
Grad. Sch. of Eng., Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
c-axis parallel oriented AlN films excite only pure shear wave. These films are suitable for thickness shear mode film resonators and SH-SAW devices. However, c-axis in the wurzite film such as ZnO and AlN tends to grow normal to the substrate. We previously found that c-axis parallel orientation is induced by ion-beam irradiation during deposition in ZnO films. In this study, we investigated the orientation control of AlN films by using ion-beam assisted RF magnetron sputtering. c-axis parallel oriented AlN films were obtained in the sample deposited under 3 kV accelerated ion beam irradiation The direction of c-axis corresponded to the ion beam direction. c-axis parallel AlN film SMR with asymmetric Bragg reflector was then prepared. Pure shear mode was excited in the resonator. Effective k15´ of the resonator was determined to be 0.052, and TCF was found to be -30.2 ppm/°C.
Keywords :
III-V semiconductors; aluminium compounds; crystal orientation; ion beam assisted deposition; semiconductor growth; semiconductor thin films; sputter deposition; surface acoustic wave resonators; thin film devices; AlN; SH-SAW devices; TCF; ZnO films; accelerated ion beam irradiation; asymmetric Bragg reflector; c-axis direction; c-axis parallel AlN film SMR; c-axis parallel orientation; c-axis parallel oriented AlN film resonator; ion beam direction; ion-beam assisted RF magnetron sputtering; orientation control; pure shear mode; pure shear wave; thickness shear mode film resonators; voltage 3 kV; wurzite film; Acoustics; Films; Ion beams; Radiation effects; Radio frequency; Substrates; Zinc oxide; AlN; SMR; c-axis parallel film; crystalline orientation control; pure shear mode;
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1253-1
DOI :
10.1109/ULTSYM.2011.0303