Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

Summary form only. The SOI MOSFET has attracted much attention as a very low power, low voltage device. The supply voltage is reduced to less than 1 V for extreme low power applications. The floating body effects, which is one of the most serious problems in partially depleted (PD) SOI MOSFETs, would be very different when the supply voltage is reduced below 1 V, because the bipolar effect and the impact ionization would be suppressed. However, most of the previous studies on the floating body effects have been reported in the regime of 1.5-3 V. In this paper, we have investigated the floating body effects in 0.15 μm PD MOSFETs below 1 V