Floating body effects in 0.15 μm partially depleted SOI MOSFETs below 1 V

Author

Saraya, T. ; Takamiya, M. ; Duyet, T.N. ; Tanaka, T. ; Ishikuro, H. ; Hiramoto, T. ; Ikoma, T.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

70

Lastpage

71

Abstract

Summary form only. The SOI MOSFET has attracted much attention as a very low power, low voltage device. The supply voltage is reduced to less than 1 V for extreme low power applications. The floating body effects, which is one of the most serious problems in partially depleted (PD) SOI MOSFETs, would be very different when the supply voltage is reduced below 1 V, because the bipolar effect and the impact ionization would be suppressed. However, most of the previous studies on the floating body effects have been reported in the regime of 1.5-3 V. In this paper, we have investigated the floating body effects in 0.15 μm PD MOSFETs below 1 V

Keywords

MOSFET; impact ionisation; silicon-on-insulator; transients; 0.15 micron; 1 V; Si; floating body effects; impact ionization; low voltage device; partially depleted SOI MOSFETs; supply voltage reduction; transient drain current; Current measurement; Electricity supply industry; Impact ionization; Instruments; Low voltage; MOSFETs; Noise level; Photonic band gap; Research and development; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552498

Filename

552498