An electrical testing method of the structural material of micro devices

Author

Hu, Yuh-Chung ; Lin, Jia-Hong ; Huang, Kuo-Yi ; Chuang, Wan-Chun

Author_Institution

Dept. of Mechatron. Eng., Huafan Univ., Taipei

fYear

2008

fDate

6-9 Jan. 2008

Firstpage

69

Lastpage

73

Abstract

This paper develops a rapid algorithm to extract the Young´s modulus and residual stress of structural material of capacitive micro-device from measuring the pre-pull-in capacitance variation of the micro test beam made of the material to be tested. The extracted Young´s modului and residual stresses of demonstrated samples agree very well with the experimental measurement. The present method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test and pick-up signals are both electrical.

Keywords

Young´s modulus; internal stresses; materials testing; micromechanical devices; Young´s modulus; capacitive microdevice; electrical testing method; micro test beam; microdevices; prepull-in capacitance variation; residual stress; structural material; Bridge circuits; Capacitance measurement; Circuit testing; Fabrication; Integrated circuit testing; Manufacturing; Materials testing; Residual stresses; Stress measurement; Voltage; Electrostatic; MEMS; Residual Stress; Wafer-level Testing; Young’s modulus;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on

Conference_Location

Sanya

Print_ISBN

978-1-4244-1907-4

Electronic_ISBN

978-1-4244-1908-1

Type

conf

DOI

10.1109/NEMS.2008.4484288

Filename

4484288