An electrical testing method of the structural material of micro devices

This paper develops a rapid algorithm to extract the Young´s modulus and residual stress of structural material of capacitive micro-device from measuring the pre-pull-in capacitance variation of the micro test beam made of the material to be tested. The extracted Young´s modului and residual stresses of demonstrated samples agree very well with the experimental measurement. The present method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test and pick-up signals are both electrical.