Author :
Bellwied, R. ; Beuttenmuller, R. ; Chen, W. ; DiMassimo, D. ; Dyke, H. ; French, A. ; Hall, J.R. ; Hoffmann, G.W. ; Humanic, T.J. ; Kotov, I.V. ; Kraner, H.W. ; Li, Z.Z. ; Liaw, C. C J ; Lopez, J.J. ; Lynn, D.D. ; Rykov, V.L. ; Pandey, S.U. ; Pruneau, C.
Author_Institution :
Wayne State Univ., Detroit, MI, USA
Abstract :
A 63×63 mm rectangular silicon drift detector was irradiated using a 60Co source and its performance was studied. The total accumulated dosage was 23.5 kRad. The detector´s performance after room temperature annealing was studied. The detector was found to be sufficiently radiation hard for RHIC applications
Keywords :
gamma-ray effects; silicon radiation detectors; 23.5 krad; 293 K; STAR; Si; Si drift detectors; dose; gamma irradiation; radiation hardness; room temperature annealing; total accumulated dosage; Annealing; Cathodes; Electron traps; Ionizing radiation; Laboratories; Leakage current; Prototypes; Radiation detectors; Silicon radiation detectors; Temperature;
