Title :
Radiation damage analysis of neutron irradiated double sided wedge microstrip silicon detector
Author :
Borchi, E. ; Bruzzi, M. ; Catacchini, E. ; D´Alessandro, R. ; Parrini, G.
Author_Institution :
Ist. Nazionale di Fisica Nucl., Florence, Italy
Abstract :
A double sided wedge microstrip silicon detector and a few simple pad p+n junctions, from the same silicon wafer, have been characterized and studied after 1 MeV neutron irradiation. The devices have been irradiated contemporarily at room temperature up to a fluence of 7.9 1013 cm-2. A heating cycle has been performed after irradiation on the pad devices. Thermally stimulated currents measurements have been performed after each annealing step to study the radiation induced lattice disorder. Five deep traps with energy levels from 0.27 eV to 0.44 eV have been observed with trap concentrations in the range of 1012+1014 cm-3 . The evolution of the lattice disorder as a function of the annealing time has been correlated with the changes in the electrical characteristics of the wedge detector
Keywords :
annealing; hole traps; neutron effects; p-n junctions; silicon radiation detectors; thermally stimulated currents; 1 MeV; annealing time; deep traps; double sided wedge microstrip Si detector; heating; lattice disorder; neutron irradiation; pad p+n junctions; radiation damage; room temperature; thermally stimulated currents; Annealing; Current measurement; Detectors; Heating; Lattices; Microstrip; Neutrons; Performance evaluation; Silicon; Temperature;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672632
