Radiation damage analysis of neutron irradiated double sided wedge microstrip silicon detector

Author

Borchi, E. ; Bruzzi, M. ; Catacchini, E. ; D´Alessandro, R. ; Parrini, G.

Author_Institution

Ist. Nazionale di Fisica Nucl., Florence, Italy

fYear

1997

fDate

9-15 Nov 1997

Firstpage

494

Abstract

A double sided wedge microstrip silicon detector and a few simple pad p⁺n junctions, from the same silicon wafer, have been characterized and studied after 1 MeV neutron irradiation. The devices have been irradiated contemporarily at room temperature up to a fluence of 7.9 10¹³ cm^-2. A heating cycle has been performed after irradiation on the pad devices. Thermally stimulated currents measurements have been performed after each annealing step to study the radiation induced lattice disorder. Five deep traps with energy levels from 0.27 eV to 0.44 eV have been observed with trap concentrations in the range of 10¹²+10¹⁴ cm^-3. The evolution of the lattice disorder as a function of the annealing time has been correlated with the changes in the electrical characteristics of the wedge detector

Keywords

annealing; hole traps; neutron effects; p-n junctions; silicon radiation detectors; thermally stimulated currents; 1 MeV; annealing time; deep traps; double sided wedge microstrip Si detector; heating; lattice disorder; neutron irradiation; pad p⁺n junctions; radiation damage; room temperature; thermally stimulated currents; Annealing; Current measurement; Detectors; Heating; Lattices; Microstrip; Neutrons; Performance evaluation; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672632

Filename

672632