DocumentCode
3232400
Title
Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors
Author
Ludikhuize, A.W. ; Slotboom, M. ; Nezar, A. ; Nowlin, N. ; Brock, R.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1997
fDate
26-29 May 1997
Firstpage
53
Lastpage
56
Abstract
Hot-carrier-induced problems for 50 V ENMOS and LDMOS devices implemented in a 0.8 μm CMOS process have been analyzed by monitoring the backgate current and by using 2D high-voltage on-state device simulations
Keywords
hot carriers; power MOSFET; semiconductor device models; 0.8 mum; 2D high-voltage on-state device simulations; 50 V; CMOS process; ENMOS devices; LDMOS devices; backgate current; hot-carrier-induced degradation; snapback; submicron 50 V lateral MOS transistors; Analytical models; CMOS process; Current measurement; Degradation; Hot carriers; MOS devices; MOSFETs; Monitoring; Semiconductor optical amplifiers; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601430
Filename
601430
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