DocumentCode :
3232409
Title :
Fabrication of TiO2 Schottky barrier diodes by RF magnetron sputtering
Author :
Xue, Hailin ; Chen, Weiyou ; Liu, Caixia ; Kong, Xiangzi ; Qu, Pengfei ; Liu, Ziran ; Zhou, Jingran ; Shen, Liang ; Zhong, Zhicheng ; Ruan, Shengping
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Jilin
fYear :
2008
fDate :
6-9 Jan. 2008
Firstpage :
108
Lastpage :
111
Abstract :
Titanium dioxide thin films were prepared by sol-gel method on Si (110) substrates after annealed at 650 degC. Schottky diodes of Cr/TiO2, Au//TiO2 and Ni/TiO2 were fabricated by RF magnetron sputtering, and the electrical properties of the diodes were investigated. The effective barriers Phib and ideal factors n were calculated from thermionic emission model, and it was found that the height of Schottky barriers was dependent on the work function of sputtering metals.
Keywords :
Schottky barriers; Schottky diodes; sputtering; thermionic emission; titanium compounds; Au-TiO2; Cr-TiO2; Ni-TiO2; RF magnetron sputtering; Schottky barrier diode; electrical properties; sol-gel method; thermionic emission model; titanium dioxide thin film; Annealing; Chromium; Fabrication; Gold; Magnetic properties; Radio frequency; Schottky diodes; Semiconductor thin films; Sputtering; Titanium; Schottky barrier diode; TiO2; sol-gel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
Type :
conf
DOI :
10.1109/NEMS.2008.4484297
Filename :
4484297
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3232409
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