• DocumentCode
    3232414
  • Title

    An effective end point detector on oxide CMP by motor current

  • Author

    Lin, Bih-Tiao ; Lee, S.-N.

  • Author_Institution
    Worldwide Semiconductor Manuf. Corp., Hsin-Chu, Taiwan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    We have proposed an end point detector (EPD) on Chemical Mechanical Polishing (CMP) by motor current. The conventional optic EPD can measure the thickness of dielectric film, but it is not easy do “in-situ” measurement. And the signal is not so clear even do “in situ” measurement. Instead of optic EPD, the EPD by motor current method can take the end point signal accuracy. We can apply the motor current method of EPD into STI, ILD, and IMD CMP process. The motor current EPD of STI, ILD, and IMD pattern wafers were demonstrated
  • Keywords
    chemical mechanical polishing; dielectric thin films; chemical-mechanical polishing; end point detector; interlevel dielectric; intermetal dielectric; motor current; oxide dielectric film; shallow trench isolation; Detectors; Dielectric measurements; Dielectric thin films; Friction; Optical films; Optical sensors; Semiconductor device manufacture; Semiconductor films; Surfaces; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
  • Conference_Location
    Boston, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-5217-3
  • Type

    conf

  • DOI
    10.1109/ASMC.1999.798248
  • Filename
    798248