DocumentCode
3232414
Title
An effective end point detector on oxide CMP by motor current
Author
Lin, Bih-Tiao ; Lee, S.-N.
Author_Institution
Worldwide Semiconductor Manuf. Corp., Hsin-Chu, Taiwan
fYear
1999
fDate
1999
Firstpage
295
Lastpage
298
Abstract
We have proposed an end point detector (EPD) on Chemical Mechanical Polishing (CMP) by motor current. The conventional optic EPD can measure the thickness of dielectric film, but it is not easy do “in-situ” measurement. And the signal is not so clear even do “in situ” measurement. Instead of optic EPD, the EPD by motor current method can take the end point signal accuracy. We can apply the motor current method of EPD into STI, ILD, and IMD CMP process. The motor current EPD of STI, ILD, and IMD pattern wafers were demonstrated
Keywords
chemical mechanical polishing; dielectric thin films; chemical-mechanical polishing; end point detector; interlevel dielectric; intermetal dielectric; motor current; oxide dielectric film; shallow trench isolation; Detectors; Dielectric measurements; Dielectric thin films; Friction; Optical films; Optical sensors; Semiconductor device manufacture; Semiconductor films; Surfaces; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5217-3
Type
conf
DOI
10.1109/ASMC.1999.798248
Filename
798248
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