DocumentCode :
3232414
Title :
An effective end point detector on oxide CMP by motor current
Author :
Lin, Bih-Tiao ; Lee, S.-N.
Author_Institution :
Worldwide Semiconductor Manuf. Corp., Hsin-Chu, Taiwan
fYear :
1999
fDate :
1999
Firstpage :
295
Lastpage :
298
Abstract :
We have proposed an end point detector (EPD) on Chemical Mechanical Polishing (CMP) by motor current. The conventional optic EPD can measure the thickness of dielectric film, but it is not easy do “in-situ” measurement. And the signal is not so clear even do “in situ” measurement. Instead of optic EPD, the EPD by motor current method can take the end point signal accuracy. We can apply the motor current method of EPD into STI, ILD, and IMD CMP process. The motor current EPD of STI, ILD, and IMD pattern wafers were demonstrated
Keywords :
chemical mechanical polishing; dielectric thin films; chemical-mechanical polishing; end point detector; interlevel dielectric; intermetal dielectric; motor current; oxide dielectric film; shallow trench isolation; Detectors; Dielectric measurements; Dielectric thin films; Friction; Optical films; Optical sensors; Semiconductor device manufacture; Semiconductor films; Surfaces; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-5217-3
Type :
conf
DOI :
10.1109/ASMC.1999.798248
Filename :
798248
Link To Document :
بازگشت