DocumentCode :
3232494
Title :
A low-noise readout circuit for MEMS vibratory gyroscope
Author :
Yin, Tao ; Yang, Haigang ; Zhang, Chong ; Wu, Qisong
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing
fYear :
2008
fDate :
6-9 Jan. 2008
Firstpage :
124
Lastpage :
127
Abstract :
This paper presents a gain-programmable low-noise switched-capacitor circuit for readout of a bulk micromachined gyroscope with a resonance frequency of 3-4 kHz and signal bandwidth of 100 Hz. A charge transfer method is adopted which enables the common node of the sensing and driving structure in gyroscope to a stable biasing voltage, so that the driving force influence of the voltage fluctuation on the common node in the traditional readout method is eliminated. An offset cancellation scheme is used in the readout circuit to suppress the opamp´s offset and two programmable capacitor arrays are also implemented on-chip to compensate the initial capacitance offset from the MEMS gyroscope. In order to simulate the transient response of the circuit to the vibrating gyroscope, a simplified model is proposed which uses a time-varying voltage to generate a time-varying capacitor. The chip measures 2times2.5 mm2 in a standard 0.35 mum CMOS process. Simulation results show that the readout circuit can resolve input capacitance variations of 95 aF in 100 Hz bandwidth with 83.4 dB dynamic range from a single 5 V supply.
Keywords :
CMOS integrated circuits; gyroscopes; micromachining; microsensors; readout electronics; switched capacitor networks; time-varying networks; transient response; CMOS process; MEMS vibratory gyroscope; charge transfer method; frequency 100 Hz; frequency 3 kHz to 4 kHz; gain-programmable switched-capacitor circuit; low-noise readout circuit; offset cancellation scheme; opamp; size 0.35 mum; time-varying voltage; voltage fluctuation; Bandwidth; Capacitance; Charge transfer; Circuit simulation; Gyroscopes; Micromechanical devices; Resonance; Resonant frequency; Switched capacitor circuits; Voltage; Capacitive readout; Gyroscope; Simulation model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
Type :
conf
DOI :
10.1109/NEMS.2008.4484301
Filename :
4484301
Link To Document :
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