Abstract :
The following topics are dealt: carbon nanotube transport; carrier mobility and incomplete ionization level; Monte Carlo-strain and orientation effects; semiconductor defects, diffusion, and activation; fluctuations; RF semiconductor device noise; point defects and interfaces; gate stack, semiconductor interface, and leakage current distribution; on-chip interconnect; nanoelectronics; and physical models
Keywords :
Monte Carlo methods; carbon nanotubes; carrier mobility; crystal defects; crystal orientation; diffusion; electrical conductivity; fluctuations; integrated circuit interconnections; leakage currents; nanoelectronics; point defects; semiconductor device models; semiconductor device noise; semiconductor process modelling; Monte Carlo simulation; RF semiconductor device noise; carbon nanotube transport; carrier mobility; diffusion; fluctuations; gate stack; incomplete ionization level; leakage current distribution; on-chip interconnect; orientation effects; physical models; point defects; semiconductor defects; semiconductor device simulation; semiconductor interfaces; semiconductor process simulation; strain effects;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282821
