Active and Passive RF Device Compact Modeling in CMOS Technoloies

Author

Shin, Hyungcheol ; Kang, In Man ; Jeon, Jong Wook ; Gil, Joonho

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

17

Lastpage

22

Abstract

A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented

Keywords

CMOS integrated circuits; MOSFET; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; two-port networks; varactors; 3-port measurement; CMOS technologies; RF MOSFET; accumulation-mode MOS varactor; active device modeling; high frequency thermal noise model; nonquasi-static effect; on-chip inductors on silicon; passive RF device compact modeling; pi-type substrate resistance model; substrate resistance model; temperature dependent macromodel; wide-band model; CMOS technology; Electrical resistance measurement; Inductors; MOSFETs; Radio frequency; Semiconductor device modeling; Silicon; Temperature dependence; Varactors; Wideband; Macro-modeling; Non-quasi-static effect; RF MOSFET modeling; Substrate resistance; Three-port measurement; analytical thermal noise modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282828

Filename

4061571