Title :
An amorphous silicon blocking mask for MOSFET after gate channel implants and bipolar implants in advanced BiCMOS technology
Author :
Woloszyn, Jason B. ; Carbone, Thomas A. ; Hulfachor, Ronald B.
Author_Institution :
Fairchild Semicond., South Portland, ME, USA
Abstract :
A thin amorphous silicon layer is used to protect the gate oxide from subsequent photoresist, implantation, and cleans during BiCMOS processing. Channel implantation after gate oxidation may then be used to create a more localized dopant distribution under the gate, improving transistor performance without degrading the gate oxide integrity
Keywords :
BiCMOS integrated circuits; MOSFET; doping profiles; ion implantation; oxidation; MOSFET; SIMS analysis; advanced BiCMOS technology; amorphous silicon blocking mask; bipolar implants; gate channel implants; gate oxidation; gate oxide protection; localized dopant distribution; punch-through voltage; shared-poly process flow; transistor performance; Amorphous silicon; BiCMOS integrated circuits; CMOS technology; Contamination; Implants; MOS devices; MOSFET circuits; Oxidation; Protection; Resists;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5217-3
DOI :
10.1109/ASMC.1999.798263
