Correlation of ellipsometric volume fraction to polysilicon grain size from transmission electron microscopy

Author

Carbone, Thomas A. ; Plourde, Peter ; Karagiannis, Eva

Author_Institution

Fairchild Semicond., South Portland, ME, USA

fYear

1999

fDate

1999

Firstpage

359

Lastpage

367

Abstract

The actual grain size of polysilicon films as obtained by TEM is correlated to an ellipsometric method using volume fraction and effective medium approximation modeling. The deposition temperature of polysilicon thin films was evaluated using volume fraction. It was determined that as the temperature decreased, and the film approaches an amorphous layer, the volume fraction increased. The volume fraction method is also shown to be useful for post implantation and anneal monitoring of polysilicon morphology. The growth of polysilicon films following anneal and also doping and anneal can be monitored very accurately with the volume fraction measurement

Keywords

CVD coatings; annealing; chemical vapour deposition; elemental semiconductors; ellipsometry; grain size; ion implantation; process monitoring; semiconductor thin films; silicon; transmission electron microscopy; LPCVD; Si; amorphous layer; deposition temperature; effective medium approximation modeling; ellipsometric volume fraction; in-line monitoring; polysilicon films; polysilicon grain size; polysilicon morphology; post anneal monitoring; post implantation monitoring; transmission electron microscopy; Annealing; Conductivity; Doping; Electrons; Grain boundaries; Grain size; Monitoring; Resistors; Size control; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-5217-3

Type

conf

DOI

10.1109/ASMC.1999.798265

Filename

798265