Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors

Author

Jin, Seonghoon ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of EECS, Seoul Nat. Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

35

Lastpage

38

Abstract

Based on the nonequilibrium Green´s function formalism, we study the influence of electron-phonon interactions on the electronic transport in silicon nanowire transistors as we change the channel length from 7 to 45 nm. Intravalley and intervalley phonon scattering mechanisms are taken into account in the simulation. The validity of the pure quantum ballistic transport model and the semi-classical drift-diffusion model for different channel lengths is also discussed

Keywords

Green´s function methods; MOSFET; ballistic transport; diffusion; electron-phonon interactions; elemental semiconductors; nanowires; phonons; semiconductor quantum wires; silicon; MOSFET; Si; channel length; electron-phonon interactions; electronic transport; intervalley phonon scattering mechanisms; intravalley mechanism; nonequilibrium Green´s function formalism; quantum ballistic transport model; semiclassical drift-diffusion model; silicon nanowire transistors; Ballistic transport; Charge carrier processes; Green´s function methods; Kinetic theory; MOSFETs; Particle scattering; Phonons; Poisson equations; Quantum mechanics; Silicon; electron-phonon interactions; nonequilibrium Green´s function formalism; quantum transport;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282832

Filename

4061575