Title :
Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors
Author :
Jin, Seonghoon ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of EECS, Seoul Nat. Univ.
Abstract :
Based on the nonequilibrium Green´s function formalism, we study the influence of electron-phonon interactions on the electronic transport in silicon nanowire transistors as we change the channel length from 7 to 45 nm. Intravalley and intervalley phonon scattering mechanisms are taken into account in the simulation. The validity of the pure quantum ballistic transport model and the semi-classical drift-diffusion model for different channel lengths is also discussed
Keywords :
Green´s function methods; MOSFET; ballistic transport; diffusion; electron-phonon interactions; elemental semiconductors; nanowires; phonons; semiconductor quantum wires; silicon; MOSFET; Si; channel length; electron-phonon interactions; electronic transport; intervalley phonon scattering mechanisms; intravalley mechanism; nonequilibrium Green´s function formalism; quantum ballistic transport model; semiclassical drift-diffusion model; silicon nanowire transistors; Ballistic transport; Charge carrier processes; Green´s function methods; Kinetic theory; MOSFETs; Particle scattering; Phonons; Poisson equations; Quantum mechanics; Silicon; electron-phonon interactions; nonequilibrium Green´s function formalism; quantum transport;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282832
