Title :
Sloping lifetime control by electron irradiation for 4.5 kV PT-SIThs
Author :
Morikawa, Y. ; Miura, T. ; Kekura, M. ; Miyazaki, S. ; Ichikawa, F.
Author_Institution :
Product Dev. Lab., Meidensha Corp., Shizuoka, Japan
Abstract :
This paper describes the possibility of realizing sloping lifetime control by electron irradiation. 4500 V class SIThs which have the wider n-base region are irradiated with 1 MeV electron beams on the cathode side or the anode side. These devices have sloping lifetime distributions. As a result, in the case of devices with cathode-side irradiation, we successfully improved the tradeoff relationship
Keywords :
carrier lifetime; electron beam effects; thyristors; 1 MeV; 4.5 kV; PT-SIThs; anode current; anode side; carrier lifetime control; cathode side; electron irradiation; on-state voltage; punchthrough structure; sloping lifetime control; static induction thyristors; tradeoff relationship; wide n-base region; Cathodes; Electron beams; Equations; Laboratories; Power engineering; Product development; Research and development; Scattering; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601432
