Analytical Modeling of Electron Mobility in Strained Germanium

Author

Dhar, S. ; Ungersboeck, E. ; Kosina, H. ; Grasser, T. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Wien

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

39

Lastpage

42

Abstract

An analytical model for the low-field bulk electron mobility tensor in strained germanium is presented. The model includes the effects of strain-induced splitting of the conduction band valleys in germanium and the corresponding inter-valley scattering reduction as well as temperature and doping dependence. Bulk mobility values larger than 2.5 times the strained silicon values has been predicted. The results obtained from the model have been verified using Monte Carlo simulations

Keywords

Monte Carlo methods; conduction bands; doping profiles; electron mobility; elemental semiconductors; germanium; Ge; Monte Carlo simulations; conduction band valleys; electron mobility tensor; inter-valley scattering reduction; low-field bulk electron mobility modeling; strain-induced splitting effects; strained germanium; strained silicon values; Analytical models; Capacitive sensors; Compressive stress; Electron mobility; Germanium; Scattering; Semiconductor process modeling; Silicon; Temperature dependence; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282833

Filename

4061576