Title :
Modeling of Electron Mobility Degradation for HfSiON MISFETs
Author :
Tanimoto, Hiroyoshi ; Kondo, Masaki ; Enda, Toshiyuki ; Aoki, Nobutoshi ; Iijima, Ryuji ; Watanabe, Takeshi ; Takayanagi, Mariko ; Ishiuchi, Hidemi
Author_Institution :
Center for Semicond. Res. & Dev., Toshiba Corp., Yokohama
Abstract :
The electron mobility degradation for HfSiON MISFETs was investigated. We found that the degradation had two origins; one is Coulomb scattering caused by fixed charges in HfSiON films and the other is phonon scattering by interfacial thin oxynitrided (SiON) layer; and HfSiO-related remote phonon scattering is not dominant. The mobility degradation caused by the Coulomb scattering and SiON phonon scattering is separated into two components and we develop an empirical mobility model for HfSiON devices that enables accurate simulation of electrical characteristics of the HfSiON devices
Keywords :
MISFET; electron density; electron mobility; electron-phonon interactions; hafnium compounds; inversion layers; semiconductor device models; silicon compounds; Coulomb scattering; HfSiON; MISFET model; electrical characteristics; electron mobility degradation; fixed charges; interfacial thin oxynitrided layer; inversion electron density; phonon scattering; CMOS technology; Charge carrier density; Electron mobility; Large scale integration; MISFETs; MOSFETs; Phonons; Scattering; Temperature dependence; Thermal degradation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282835
