Title :
Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics
Author :
Ando, Yuji ; Itoh, Tomohiro
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
The authors have developed a 2DEGFET (two-dimensional-electron-gas field-effect transistor) noise model that includes accurate charge-control characteristics. It is based on analytical functions relating carrier concentration to Fermi level. Using this model, the influence of drain current, frequency and device parameters on NF (noise figure) was studied. The theory was found to explain the experimentally observed trend in NF behavior. The Fukui fitting factor deduced from this calculation agrees with typical experimental results. This agreement indicates that the present noise model is applicable to the design of 2DEGFETs and amplifiers
Keywords :
Fermi level; carrier density; electron device noise; high electron mobility transistors; semiconductor device models; 2DEGFET; Fermi level; Fukui fitting factor; analytical functions; carrier concentration; charge control characteristics; drain current; noise figure; noise model; two-dimensional electron gas field-effect transistors; Analytical models; Electrons; FETs; HEMTs; MODFETs; Microelectronics; National electric code; Noise measurement; Noise shaping; Performance analysis;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79827
