DocumentCode
3232832
Title
The contribution of lateral current spreading to the temperature sensitivity of strained-layer, multiple-quantum-well, long wavelength, ridge waveguide lasers
Author
Evans, J.D. ; Letal, G.J. ; Li, G.P. ; Simmons, J.G.
Author_Institution
Bell-Northern Res., Ottawa, Ont., Canada
Volume
1
fYear
1995
fDate
30-31 Oct 1995
Firstpage
278
Abstract
We report on measurements of the lateral current spreading in InGaAsP-InP based multiple-quantum well (MQW), ridge waveguide lasers and the contribution of this leakage mechanism to the temperature dependence of these devices
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; sensitivity; waveguide lasers; InGaAsP-InP; InGaAsP-InP based MQW ridge waveguide lasers; MQW lasers; lateral current spreading; leakage mechanism; long wavelength ridge waveguide lasers; multiple-quantum-well lasers; strained-layer; temperature dependence; temperature sensitivity; Costs; Laser modes; Laser theory; Optical waveguides; Quantum well devices; Semiconductor lasers; Temperature dependence; Temperature sensors; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484868
Filename
484868
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