A simple implanted backgate MOSFET for dynamic threshold control in fully-depleted SOI CMOS

Summary form only given. Recently Yang et al. (1995) have reported a fully-depleted SOIAS MOSFET structure in which an oxide-isolated polysilicon backgate electrode is formed beneath the channel. The device threshold voltage can be modulated by biasing this electrode. In this way the benefits of dynamic threshold adjustment in response to process variations, changes in temperature and operating requirements demonstrated for bulk CMOS ICs using ≈1 V power supplies can be extended to fully-depleted SOI technology, which offers inherent advantages of reduced source/drain capacitance and near-ideal subthreshold swing. This paper reports fabrication and testing of a very simple new backgated FD-SOI MOSFET structure that can also provide dynamic threshold control