Title :
Comparative study of silicon detectors
Author :
Allier, C.P. ; Valk, H. ; Huizenga, J. ; Bom, V.R. ; Hollander, R.W. ; Eijk, C.W.E.
Author_Institution :
Radiat. Technol. Group, Delft Univ. of Technol., Netherlands
Abstract :
We studied three different types of silicon sensors: PIN diodes, circular drift detectors, both made at the Delft University of Technology (DUT), and Hamamatsu S5345 avalanche photodiodes. Measurements have been carried out in the same optimized experimental setup, both at room temperature and at low temperatures. Comparison is made for direct X-ray detection and CsI(Tl) scintillation light readout
Keywords :
X-ray detection; avalanche photodiodes; drift chambers; p-i-n diodes; silicon radiation detectors; 293 K; Hamamatsu S5345 avalanche photodiodes; PIN diodes; Si; Si detectors; circular drift detectors; direct X-ray detection; low temperatures; room temperature; Avalanche photodiodes; Capacitance; Energy resolution; Noise shaping; PIN photodiodes; Preamplifiers; Silicon; Solid scintillation detectors; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672702
