Investigation on micromachining technology compatibility of PECVD SiO2/Si3N4 double-layer electrets

Author

Liu, Jin ; Lv, Zhiqiu ; Zhang, Jinwen

Author_Institution

Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing

fYear

2008

fDate

6-9 Jan. 2008

Firstpage

223

Lastpage

226

Abstract

In this paper PECVD SiO₂/Si₃N₄ double-layer electrets were investigated for their compatibility with micromachining technology, such as conventional lithography and etching techniques. After the experiments, we find that no matter under what condition, either high temperature or high humid condition, could H₃PO₄ improve the charge stability of SiO₂/Si₃N₄ double-layer electrets a little. RIE and oxygen plasma stripping reduce the charge stability significantly. Acetone stripping does not influence the charge stability in high temperature and high humidity. The other techniques, such as BHF, fuming nitric acid stripping, corrosive of Al and Au etc., decrease the charge stability a little.

Keywords

etching; lithography; micromachining; plasma CVD; silicon compounds; BHF; H₃PO₄; PECVD; RIE; SiO₂-Si₃N₄; acetone stripping; charge stability; double-layer electrets; etching techniques; fuming nitric acid stripping; lithography techniques; micromachining technology compatibility; oxygen plasma stripping; Electrets; Etching; Gold; Humidity; Lithography; Micromachining; Plasma stability; Plasma temperature; Substrates; Surface treatment; PECVD; SiO2/Si3N4 double-layer; charge stability; electret; micromachining technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on

Conference_Location

Sanya

Print_ISBN

978-1-4244-1907-4

Electronic_ISBN

978-1-4244-1908-1

Type

conf

DOI

10.1109/NEMS.2008.4484323

Filename

4484323