Title :
Anode short structure for 4.5 kV PT-SIThs
Author :
Kekura, M. ; Morikawa, Y. ; Yamada, S. ; Miyazaki, S. ; Ichikawa, F.
Author_Institution :
Product Dev. Lab., Meidensha Corp., Shizuoka, Japan
Abstract :
Anode short structures combined with a punchthrough structure have been investigated. The fabricated device is a 4.5 kV-SITh of 10 mm×10 mm chip size. The investigated structure is very effective in reducing power dissipation and improves the trade-off relationships in the parameters of the deposition sheet resistance of n-buffer and the short rate. We also performed two dimensional simulations, using a multi-halfunit cell model, to analyze S-shape forward I-V characteristics
Keywords :
carrier density; semiconductor device models; short-circuit currents; thyristors; 10 mm; 4.5 kV; PT-SIThs; S-shape forward I-V characteristics; anode short structure; multi-halfunit cell model; n-buffer deposition sheet resistance; power dissipation; punchthrough structure; short rate; static induction thyristors; trade-off relationships; two dimensional simulations; Anodes; Electrical resistance measurement; Energy measurement; Laboratories; Power dissipation; Power engineering; Product development; Tail; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601433
