Anode short structure for 4.5 kV PT-SIThs

Author

Kekura, M. ; Morikawa, Y. ; Yamada, S. ; Miyazaki, S. ; Ichikawa, F.

Author_Institution

Product Dev. Lab., Meidensha Corp., Shizuoka, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

65

Lastpage

68

Abstract

Anode short structures combined with a punchthrough structure have been investigated. The fabricated device is a 4.5 kV-SITh of 10 mm×10 mm chip size. The investigated structure is very effective in reducing power dissipation and improves the trade-off relationships in the parameters of the deposition sheet resistance of n-buffer and the short rate. We also performed two dimensional simulations, using a multi-halfunit cell model, to analyze S-shape forward I-V characteristics

Keywords

carrier density; semiconductor device models; short-circuit currents; thyristors; 10 mm; 4.5 kV; PT-SIThs; S-shape forward I-V characteristics; anode short structure; multi-halfunit cell model; n-buffer deposition sheet resistance; power dissipation; punchthrough structure; short rate; static induction thyristors; trade-off relationships; two dimensional simulations; Anodes; Electrical resistance measurement; Energy measurement; Laboratories; Power dissipation; Power engineering; Product development; Tail; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601433

Filename

601433