Surface polish of GSO scintillator using chemical process

Author

Kurashige, K. ; Kurata, Y. ; Ishibashi, H. ; Susa, K.

Author_Institution

Tsukuba Res. Lab., Hitachi Chem. Co. Ltd., Ibaraki, Japan

fYear

1997

fDate

9-15 Nov 1997

Firstpage

842

Abstract

A Ce doped Gd₂SiO₅ (GSD) single crystal is an excellent scintillator featuring a large light output, a short decay constant and a high absorption coefficient. It was shown in our previous studies that the surfaces of the scintillator should be polished to get scintillation light output efficiently especially for long and narrow scintillators. Therefore, we newly developed a chemical process to polish the GSO crystal. The surface of the GSO crystal was found to become smooth when it was etched using anhydrous orthophosphoric acid at 150-300°C. The process was also proved to be applicable to large size crystal such as 20×20×200 mm³ preventing thermal shock crack. An improvement in the scintillator efficiency was confirmed using the chemical polishing process

Keywords

cerium; gadolinium compounds; polishing; solid scintillation detectors; thermal shock; 150 to 300 C; GSO scintillator; Gd₂SiO₅:Ce; anhydrous orthophosphoric acid; chemical polishing process; chemical process; decay constant; scintillation light output; scintillator efficiency; thermal shock crack; Absorption; Chemical processes; Energy resolution; Etching; Nuclear physics; Positron emission tomography; Rough surfaces; Surface roughness; Testing; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672712

Filename

672712