Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

Author

Kim, Yonghyun ; Hwang, Gyeong ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Texas A&M Univ., Austin, TX

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

79

Lastpage

82

Abstract

We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Si_i pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally

Keywords

ab initio calculations; arsenic; binding energy; density functional theory; diffusion; elemental semiconductors; interstitials; semiconductor process modelling; silicon; tensile strength; vacancies (crystal); Si-As; ab initio calculation; biaxial tensile strain; binding energies; density functional theory calculation; interstitial-mediated arsenic diffusion; strained silicon; transient enhanced diffusion; vacancy deactivation; Annealing; Capacitive sensors; Computational modeling; Density functional theory; Lattices; MOSFET circuits; Microelectronics; Silicon; Stability; Tensile strain; arsenic; deactivation; diffusion; silicon; strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282843

Filename

4061586