SOI SJ-LDMOS with added fixed charges in buried oxide

Author

Wang, Wenlian

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

8-11 May 2010

Firstpage

660

Lastpage

663

Abstract

A high voltage Superjunction LDMOS on silicon-on-insulator (SOI) with added fixed charges is proposed in this paper. The increased charges enhance the electric field in the buried-oxide Layer (BOX), and the BOX takes on the almost vertical voltage. The modulated vertical electric field suppresses the charge imbalance in Superjunction caused by the substrate-assisted depletion effect, which improves the breakdown voltage. In addition, the enhanced electric field employs the thinner BOX, which is useful to minimize self-heating effects.

Keywords

MOSFET; electric fields; semiconductor device breakdown; silicon-on-insulator; SOI SJ-LDMOS; breakdown voltage; buried oxide; buried-oxide layer; charge imbalance; high voltage superjunction LDMOS; modulated vertical electric field; self-heating effect; silicon-on-insulator; substrate-assisted depletion effect; Current measurement; Electronic equipment testing; Isolation technology; Laboratories; Leakage current; Power integrated circuits; Semiconductor thin films; Silicon on insulator technology; Thin film devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525016

Filename

5525016