Title :
Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
Author :
Zhou, Wei ; Yang, Jinling ; Li, Yan ; Ji, An ; Yang, Fuhua
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus Eps, prestress s0, and fracture strength smax of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of Eps and s0, but quite different values of smax. The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.
Keywords :
Weibull distribution; Young´s modulus; dielectric thin films; fracture toughness; fracture toughness testing; micromechanical devices; plasma CVD; silicon; silicon compounds; stress analysis; MEMS; PECVD silicon nitride thin films; SiN; SiO2-Si; Weibull distribution function; fracture properties; fracture strength; load-deflection model; long rectangular membrane bulge test; mechanical properties; plane-strain modulus; statistical analysis; thin film deposition; Biomembranes; Load modeling; Mechanical factors; Semiconductor thin films; Silicon compounds; Sputtering; Statistical analysis; Testing; Transistors; Weibull distribution; Bulge test; Fracture property; Silicon nitride; Weibull distribution function;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
DOI :
10.1109/NEMS.2008.4484331
