Title :
High performance power DMOSFET with integrated Schottky diode
Author :
Korman, C.S. ; Chang, H.R. ; Shenai, K. ; Walden, J.P.
Author_Institution :
General Electric Corp. Res & Dev. Center, Schenectady, NY, USA
Abstract :
A hybrid DMOSFET-Schottky (FastFET) device has been developed that exhibits the excellent on-resistance and gate control properties of the DMOSFET along with improved internal diode switching characteristics. The 45 V and 30 V devices fabricated use an integrated Schottky device that consumes less than 15% of the active area while returning a 35% improvement in reverse recovery performance. The leakage of the FastFET is higher than that of the standard DMOSFET but is still within the tolerances set by most manufacturers´ data sheets. Future improvements will include process modification that will reduce this leakage
Keywords :
Schottky-barrier diodes; insulated gate field effect transistors; power transistors; 30 V; 45 V; DMOSFET; FastFET; Schottky diode; gate control; hybrid technology; internal diode switching; leakage; on-resistance; performance; power transistors; reverse recovery; Circuits; FETs; Immune system; Inductance; Metallization; Neutrons; Power supplies; Schottky barriers; Schottky diodes; Switches;
Conference_Titel :
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location :
Milwaukee, WI
DOI :
10.1109/PESC.1989.48488
