DocumentCode
3233034
Title
High performance power DMOSFET with integrated Schottky diode
Author
Korman, C.S. ; Chang, H.R. ; Shenai, K. ; Walden, J.P.
Author_Institution
General Electric Corp. Res & Dev. Center, Schenectady, NY, USA
fYear
1989
fDate
26-29 Jun 1989
Firstpage
176
Abstract
A hybrid DMOSFET-Schottky (FastFET) device has been developed that exhibits the excellent on-resistance and gate control properties of the DMOSFET along with improved internal diode switching characteristics. The 45 V and 30 V devices fabricated use an integrated Schottky device that consumes less than 15% of the active area while returning a 35% improvement in reverse recovery performance. The leakage of the FastFET is higher than that of the standard DMOSFET but is still within the tolerances set by most manufacturers´ data sheets. Future improvements will include process modification that will reduce this leakage
Keywords
Schottky-barrier diodes; insulated gate field effect transistors; power transistors; 30 V; 45 V; DMOSFET; FastFET; Schottky diode; gate control; hybrid technology; internal diode switching; leakage; on-resistance; performance; power transistors; reverse recovery; Circuits; FETs; Immune system; Inductance; Metallization; Neutrons; Power supplies; Schottky barriers; Schottky diodes; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location
Milwaukee, WI
Type
conf
DOI
10.1109/PESC.1989.48488
Filename
48488
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