Title :
Deep salicidation using nickel for suppressing the floating body effect in partially depleted SOI-MOSFET
Author :
Deng, F. ; Johnson, R.A. ; Dubbelday, W.B. ; Garcia, G.A. ; Asbeck, P.M. ; Lau, S.S.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
Salicidation is a well known technique to suppress the floating body effect because the silicide near the source/body junction acts as a sink for holes. In this paper, we investigate the effect of nickel silicide layers of varying thickness on the drain current kink effect, the anomalous subthreshold slope and the breakdown voltage in partially depleted SOI-MOSFET. We demonstrate that deep salicidation is highly effective in suppressing floating body effects
Keywords :
MOSFET; electric breakdown; nickel compounds; semiconductor device metallisation; silicon-on-insulator; Ni2Si; anomalous subthreshold slope; breakdown voltage; deep salicidation; drain current kink effect; floating body effect; partially depleted SOI-MOSFET; source/body junction; Conductivity; Immune system; Impact ionization; Intrusion detection; Microscopy; Nickel; Silicides; Silicon; Substrates; Threshold voltage;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552502
