Title :
Multi-Layer Model for Stressor Film Deposition
Author :
Loiko, K.V. ; Adams, V. ; Tekleab, D. ; Winstead, B. ; Bo, X.-Z. ; Grudowski, P. ; Goktepeli, S. ; Filipiak, S. ; Goolsby, B. ; Kolagunta, V. ; Foisy, M.C.
Author_Institution :
Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX
Abstract :
Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical deposition process. Only the multi-layer model is able to simultaneously match the experimental data on drive current vs. etch-stop layer stress, poly pitch, source/drain recess, and spacer stress
Keywords :
MOSFET; semiconductor device models; stress effects; MOSFET; drive current; etch-stop layer stress; mechanical quasiequilibrium; multilayer model; physical deposition process; poly pitch; source-drain recess; spacer stress; stressor film deposition; Compressive stress; Equations; Etching; Mathematical model; Semiconductor films; Silicon; Space technology; Stress measurement; Surface treatment; Tensile stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282853
