Title :
Optimized silicon low-voltage power MOSFET´s for high-frequency power conversion
Author :
Shenai, Krishna ; Korman, Charles S. ; Walden, John P. ; Yerman, Alexander J. ; Baliga, B.Jayant
Author_Institution :
General Electric Corp. Res. & Dev. Center, Schenectady, NY, USA
Abstract :
The specific results obtained from a systematic optimization of low-voltage silicon power MOSFET technologies are discussed. The areas discussed include system impact, unit cell optimization, device and process modeling, fabrication technology development, and measured results. The device technologies optimized include 30 V, 50 V, and 100 V vertical power DMOSFETs with refractory silicide gate and contact metallizations. Devices with the lowest specific on-resistance, the lowest specific input capacitance, and optimized switching performance have been fabricated with excellent wafer yield. These results represent the best high-frequency switching performance based on silicon material technology ever reported
Keywords :
elemental semiconductors; insulated gate field effect transistors; power convertors; power transistors; silicon; 100 V; 30 V; 50 V; DMOSFETs; Si; high-frequency power conversion; input capacitance; on-resistance; optimization; power MOSFET; power transistors; semiconductors; switching performance; Area measurement; Capacitance; Fabrication; MOSFET circuits; Metallization; Power MOSFET; Power system modeling; Semiconductor device modeling; Silicides; Silicon;
Conference_Titel :
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location :
Milwaukee, WI
DOI :
10.1109/PESC.1989.48489
