Optimized silicon low-voltage power MOSFET´s for high-frequency power conversion

Author

Shenai, Krishna ; Korman, Charles S. ; Walden, John P. ; Yerman, Alexander J. ; Baliga, B.Jayant

Author_Institution

General Electric Corp. Res. & Dev. Center, Schenectady, NY, USA

fYear

1989

fDate

26-29 Jun 1989

Firstpage

180

Abstract

The specific results obtained from a systematic optimization of low-voltage silicon power MOSFET technologies are discussed. The areas discussed include system impact, unit cell optimization, device and process modeling, fabrication technology development, and measured results. The device technologies optimized include 30 V, 50 V, and 100 V vertical power DMOSFETs with refractory silicide gate and contact metallizations. Devices with the lowest specific on-resistance, the lowest specific input capacitance, and optimized switching performance have been fabricated with excellent wafer yield. These results represent the best high-frequency switching performance based on silicon material technology ever reported

Keywords

elemental semiconductors; insulated gate field effect transistors; power convertors; power transistors; silicon; 100 V; 30 V; 50 V; DMOSFETs; Si; high-frequency power conversion; input capacitance; on-resistance; optimization; power MOSFET; power transistors; semiconductors; switching performance; Area measurement; Capacitance; Fabrication; MOSFET circuits; Metallization; Power MOSFET; Power system modeling; Semiconductor device modeling; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE

Conference_Location

Milwaukee, WI

Type

conf

DOI

10.1109/PESC.1989.48489

Filename

48489