A 5.25GHz GaAs PHEMT power amplifier for 802.11a application

Author

Peng, YanJun ; Tsang, K.F. ; Sun, Ling ; Lu, Huaxiang ; Li, Yanjin ; Jing, Weiping

Author_Institution

Jiangsu Province Key Lab. of ASIC Design, Nantong Univ., Nantong, China

fYear

2010

fDate

8-11 May 2010

Firstpage

693

Lastpage

695

Abstract

A 5.25 GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2 μm AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 24.8 dBm (P_1dB), small signal gain of 25.6 dB and the power added efficiency (PAE) of 22% at P_1dB. The die size is only 1.5 mm×1.0 mm.

Keywords

MMIC power amplifiers; aluminium compounds; circuit stability; gallium arsenide; indium compounds; millimetre wave power amplifiers; power HEMT; wireless LAN; 802.11a application; AlGaAs-InGaAs-GaAs; OMMIC PHEMT process; PHEMT power amplifier; frequency 5.25 GHz; gain 25.6 dB; linear output power; power added efficiency; size 0.2 mum; stabilizing circuit; voltage 3.5 V; wireless local area network; Broadband amplifiers; Circuit stability; Gallium arsenide; Indium gallium arsenide; Linearity; PHEMTs; Power amplifiers; Power generation; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525029

Filename

5525029