Title :
Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
Author :
Eikyu, Katsumi ; Okagaki, Takeshi ; Tanizawa, Motoaki ; Ishikawa, Kiyoshi ; Eimori, Takahisa ; Tsuchiya, Osamu
Author_Institution :
Renesas Technol. Corp., Hyogo
Abstract :
A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. This method enables physically accurate worst-case prediction in the early stage of device development concurrently. It is found through the intensive TEG analysis and TCAD simulation that correlations between process factors have a significant impact on the worst-case corner estimation. A new extraction method of compact model parameters based on error propagation analysis is developed to consider correlations between parameters
Keywords :
correlation methods; electronic engineering computing; error analysis; field effect transistors; semiconductor device models; semiconductor process modelling; statistical analysis; technology CAD (electronics); TCAD simulation; compact model parameters; correlation; error propagation analysis; global identification; intensive TEG analysis; statistical worst-case model generation; Analytical models; Error analysis; FETs; Mass production; Parameter extraction; Phase measurement; Predictive models; Random access memory; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282861