• DocumentCode
    3233365
  • Title

    Calculated high frequency performance of an npn Si1-xGe x HBT

  • Author

    Racanelli, Marco ; Greve, D.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Carnegie-Mellon Univ., Pittsburgh, PA, USA
  • fYear
    1989
  • fDate
    7-9 Aug 1989
  • Firstpage
    150
  • Lastpage
    159
  • Abstract
    The authors calculate the performance of an Si1-xGex/Si HBT (heterojunction bipolar transistor), including effects of major importance such as bandgap narrowing and collector high injection. A description of the mobility model used is included. The results indicate that very high performance is achievable in these devices, particularly with respect to figures of merit such as fmax, which are strongly influenced by the base resistance. For devices with 1-μm geometry, the authors predict fmax=81 GHz and fT=71 GHz. Such devices should also offer excellent performance in digital circuits in which low base resistance is essential
  • Keywords
    Ge-Si alloys; carrier mobility; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; solid-state microwave devices; 1 micron; 71 GHz; 81 GHz; Si1-xGex-Si; bandgap narrowing; collector high injection; cutoff frequency; digital circuits; figures of merit; heterojunction bipolar transistor; high frequency performance; low base resistance; maximum frequency; mobility model; n-p-n HBT; Acoustic scattering; Capacitive sensors; Doping; Effective mass; Frequency; Germanium; Heterojunction bipolar transistors; Impurities; Photonic band gap; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • Type

    conf

  • DOI
    10.1109/CORNEL.1989.79830
  • Filename
    79830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3233365