Title :
A compact model for Phase Change Memories
Author :
Fantini, P. ; Benvenuti, A. ; Pirovano, A. ; Pellizzer, F. ; Ventrice, D. ; Ferrari, G.
Author_Institution :
STMicroelectron., Agrate Brianza
Abstract :
In this paper we present the first inherently single-piece model describing the phase change memories (PCM) electrical behavior. The model correctly reproduces for all bias and temperature conditions the behavior of both SET and RESET states, including the exponential pre-switching regime and the S-shaped negative differential resistance region. The model responds with resistance changes to different programming (SET or RESET) pulses, and retains the stored data. The proposed model provides a precious tool for the design of non-volatile memory products based on the new phase change memory concept
Keywords :
integrated memory circuits; phase change materials; S-shaped negative differential resistance; SET-RESET states; electrical behavior; exponential preswitching regime; phase change memories; Electric resistance; Equations; Nonvolatile memory; Phase change materials; Phase change memory; Pulse modulation; Resistors; Semiconductor device modeling; Shape; Voltage; Compact model; Multilevel; Non-Volatile Memory; PCM; Phase Change Memory;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282863
