A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors

Author

Deng, Jie ; Wong, H. S Philip

Author_Institution

Dept. of Electr. Eng., Center for Integrated Syst., Stanford, CA

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

166

Lastpage

169

Abstract

This paper presents a circuit-compatible compact model for short channel length (5 nm~100 nm), quasi-ballistic single wall carbon nanotube field-effect transistors (CNFETs). For the first time, a universal circuit-compatible CNFET model was implemented with HSPICE. This model includes practical device non-idealities, e.g. the quantum confinement effects in both circumferential and channel length direction, the acoustical/optical phonon scattering in channel region and the resistive source/drain, as well as the real time dynamic response with a transcapacitance array. This model is valid for CNFET for a wide diameter range and various chiralities as long as the carbon nanotube (CNT) is semiconducting

Keywords

SPICE; carbon nanotubes; field effect transistors; nanotube devices; semiconductor device models; HSPICE; carbon nanotube field effect transistors; chiralities; circuit-compatible SPICE model; enhancement mode CNFET; quasiballistic single wall CNFET; Acoustic scattering; CNTFETs; Circuits; Optical arrays; Optical devices; Optical scattering; Particle scattering; Phonons; Potential well; SPICE; CMOS; CNFET; SPICE; carbon nanotube; circuit-compatible; compact model; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282864

Filename

4061607