Title :
High frequency switching of power MOSFETs
Author :
Hinchliffe, Stephen ; Hobson, Leslie
Author_Institution :
Stanelco Products Ltd., Eastleigh, UK
Abstract :
The effect of source inductance on the switching performance of power MOSFETs has been investigated. An IRF 450 in a T03 package was modified to include a second source lead for drive purposes. Switching tests have also been carried out on current-sending FETs and RF packaged power MOSFETs. The results are compared and related to high-frequency power convertor applications. Failure modes are also discussed
Keywords :
insulated gate field effect transistors; power convertors; power transistors; switching; HF; IRF 450; T03 package; failure modes; power MOSFETs; power convertor; power transistors; source inductance; switching performance; Circuits; Frequency conversion; Inductance; MOSFETs; Packaging; Parasitic capacitance; Power supplies; Radio frequency; Switching frequency; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location :
Milwaukee, WI
DOI :
10.1109/PESC.1989.48490
