Title :
LOCOS process-induced stress effect on CMOS SOI characteristics
Author :
Huang, Cheng-Liang ; Soleimani, Hamid ; Grula, Greg ; Arora, Narain ; Sleight, Jeff ; Antoniadis, Dimitri
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
Process-induced stress effects on LOCOS SOI devices are reported. We show that as the field oxide thickness increases, degradation (enhancement) of NMOS (PMOS) I-V characteristics becomes increasingly pronounced. In addition, the linear relationship of transconductance vs. device width, typically seen in the bulk devices, becomes nonlinear. We attribute both phenomena to the LOCOS-induced stress effects on the SOI film
Keywords :
CMOS integrated circuits; characteristics measurement; integrated circuit measurement; internal stresses; isolation technology; silicon-on-insulator; CMOS SOI characteristics; I-V characteristics; LOCOS process-induced stress effect; device width; field oxide thickness; transconductance; CMOS process; CMOS technology; Compressive stress; Degradation; MOS devices; Semiconductor films; Silicon; Temperature; Tensile stress; Transconductance;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552504
