DocumentCode
3233516
Title
A novel spiral inductor model with a new parameter-extraction approach
Author
Chen, Liang ; Li, Zhiqun ; Li, Qin ; Zhang, Li ; Li, Wei
Author_Institution
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
fYear
2010
fDate
8-11 May 2010
Firstpage
720
Lastpage
723
Abstract
A novel inductor model, which considers the magnetic and capacitive substrate coupling comprehensively, and a new fast approach for substrate network parameter extraction are presented in this paper. The introduction of substrate parasitic inductance (SPI) and the mutual inductance is based on the resonance characteristic of the measured substrate´s Y-parameter and their physical meaning. A series of inductors were fabricated to build and verify the inductor model, using 0.13 μm RF CMOS process. A good agreement between the measured data and model over a wide frequency range has been obtained.
Keywords
CMOS integrated circuits; inductors; radiofrequency integrated circuits; RF CMOS process; capacitive substrate coupling; magnetic coupling; mutual inductance; parameter extraction approach; resonance characteristic; size 0.13 mum; spiral inductor model; substrate Y-parameter measurement; substrate network parameter extraction; substrate parasitic inductance; CMOS process; Couplings; Frequency measurement; Inductance measurement; Inductors; Magnetic resonance; Parameter extraction; Radio frequency; Semiconductor device modeling; Spirals; magnetic and capacitive coupling; novel inductor model; substrate parasitic inductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525041
Filename
5525041
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