Title :
A novel spiral inductor model with a new parameter-extraction approach
Author :
Chen, Liang ; Li, Zhiqun ; Li, Qin ; Zhang, Li ; Li, Wei
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A novel inductor model, which considers the magnetic and capacitive substrate coupling comprehensively, and a new fast approach for substrate network parameter extraction are presented in this paper. The introduction of substrate parasitic inductance (SPI) and the mutual inductance is based on the resonance characteristic of the measured substrate´s Y-parameter and their physical meaning. A series of inductors were fabricated to build and verify the inductor model, using 0.13 μm RF CMOS process. A good agreement between the measured data and model over a wide frequency range has been obtained.
Keywords :
CMOS integrated circuits; inductors; radiofrequency integrated circuits; RF CMOS process; capacitive substrate coupling; magnetic coupling; mutual inductance; parameter extraction approach; resonance characteristic; size 0.13 mum; spiral inductor model; substrate Y-parameter measurement; substrate network parameter extraction; substrate parasitic inductance; CMOS process; Couplings; Frequency measurement; Inductance measurement; Inductors; Magnetic resonance; Parameter extraction; Radio frequency; Semiconductor device modeling; Spirals; magnetic and capacitive coupling; novel inductor model; substrate parasitic inductance;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525041