• DocumentCode
    3233542
  • Title

    Workload regulating wafer release in a GaAs fab facility

  • Author

    Lawton, James W. ; Drake, Al ; Henderson, Rebecca ; Wein, Lawrence M. ; Whitney, Ron ; Zuanich, Dick

  • Author_Institution
    MIT, Cambridge, MA, USA
  • fYear
    1990
  • fDate
    21-23 May 1990
  • Firstpage
    33
  • Lastpage
    38
  • Abstract
    The workload regulating wafer release policy, that was developed for MWTD´s (Hewlett-Packard´s Microwave Technology Division) GaAs fabrication facility is described. A discrete-event simulator, ManSim was used to determine its improvements over other wafer release policies, and it was shown that it has the potential to reduce fabrication cycle time by roughly 50%. It is suggested that the plant´s historical focus on leading-edge process technology rather than on more traditional measures of manufacturing performance has delayed the recognition of the potential of a policy of this type
  • Keywords
    MMIC; gallium arsenide; integrated circuit manufacture; management; GaAs fab facility; Hewlett-Packard; ManSim; Microwave Technology Division; discrete-event simulator; fabrication cycle time reduction; leading-edge process technology; workload regulating wafer release policy; Circuits; Delay; Engineering management; Gallium arsenide; Inhibitors; Instruments; MMICs; Microwave technology; Technology management; Workstations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International
  • Conference_Location
    Burlingame, CA
  • Type

    conf

  • DOI
    10.1109/ISMSS.1990.66125
  • Filename
    66125