Title :
Monte Carlo simulation of ultimate DGMOS based on a Pearson Effective Potential formalism
Author :
Jaud, M.-A. ; Barraud, S. ; Dollfus, P. ; Jaouen, H. ; Carval, G. Le
Author_Institution :
CEA-LETI, Grenoble
Abstract :
These last years, the effective potential approach has become very attractive for assessing the impact of first order quantum effects on electron transport in nanoscale MOSFETs. In this paper the Gaussian function is replaced by a Pearson IV function for improving the description of the electron wave-packet. The new effective potential implemented into a semi-classical Monte-Carlo particle simulator gives an excellent representation of the electron density profile. A 2D extension of the model in the transport direction allows us to qualitatively evaluate the impact of quantum confinement effects on I-V electrical characteristics of double-gate nMOSFET with a channel length Lc = 10 nm
Keywords :
MOSFET; Monte Carlo methods; electrical conductivity; electron density; nanoelectronics; semiconductor device models; 10 nm; I-V electrical characteristics; Monte Carlo simulation; Pearson effective potential formalism; double-gate nMOSFET; electron density; electron transport; electron wave-packet; nanoscale DGMOS; quantum confinement effects; Convolution; Diodes; Electric variables; Electrons; MOSFET circuits; Particle scattering; Potential well; Quantization; Quantum mechanics; Resonant tunneling devices; Effective Potential; Monte-Carlo method; Quantum effects; double-gate MOSFET;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282870
